Study of deuterium metal interaction by ion implantation

نویسندگان
چکیده

برای دانلود باید عضویت طلایی داشته باشید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

THE ROLE OF METAL ION ON PHYSIOCHEMICAL PROPERTIES OF METAL ALUMINATES PREPARED BY IMPREGNATION METHOD

A series of MAl2O4 (M=Ni, Zn, and Cu) aluminates were prepared by using impregnation method; the metal content of the products was ranged between 5wt% to 25wt%. The samples were characterized by x-ray diffraction (XRD), Brunauer Emmett Teller (BET) surface area, NH3 temperature-programmed desorption (NH3-TPD), and inductively coupled argon plasma (ICP). The specific surface areas of zinc, ni...

متن کامل

study of cohesive devices in the textbook of english for the students of apsychology by rastegarpour

this study investigates the cohesive devices used in the textbook of english for the students of psychology. the research questions and hypotheses in the present study are based on what frequency and distribution of grammatical and lexical cohesive devices are. then, to answer the questions all grammatical and lexical cohesive devices in reading comprehension passages from 6 units of 21units th...

Tuning parameters of metal ion implantation within a microfluidic channel

Applying electrical fields is a simple and versatile method to manipulate and reconfigure optofluidic devices. Several methods to apply electric fields using electrodes on polymers or in the context of lab-on-a-chip devices exist. In this paper, we utilize an ion-implanted process to pattern electrodes within a fluidic channel made of polydimethylsiloxane (PDMS). Electrode structuring within th...

متن کامل

Interface Hardening with Deuterium Implantation

Incorporation of deuterium to passivate silicon-dangling bonds at the Si-SiO2 interface through ion implantation before the growth of the gate oxide is the focus of this work. Polycrystalline silicon gate n-channel metal-oxide-semiconductor diodes with 4 nm gate oxide grown on deuterium-implanted p-type silicon ^100& substrate were investigated. Deuterium implanted at a light dose of 1 3 10/cm ...

متن کامل

Graphene synthesis by ion implantation.

We demonstrate an ion implantation method for large-scale synthesis of high quality graphene films with controllable thickness. Thermally annealing polycrystalline nickel substrates that have been ion implanted with carbon atoms results in the surface growth of graphene films whose average thickness is controlled by implantation dose. The graphene film quality, as probed with Raman and electric...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

ژورنال

عنوان ژورنال: Bulletin of Materials Science

سال: 1996

ISSN: 0250-4707,0973-7669

DOI: 10.1007/bf02744788